过年歇业内存现货交易价大跌
作者： DRAMeXchange
责任编辑： 阚智
来源： 《电脑商情报》
时间： 2007-02-14 07:46
The upcoming Chinese New Year has further contributed to a weaker DRAM market, as the DDR2 spot price continued to decline. The DXI index fell from 4139 to 3998. However, in contrast to the weak DRAM market, the successful issuing of a 350 million ECB by ProMOS shows that investors are still willing to conduct long term investments in the DRAM industry.
Despite the ongoing price declines, demand remains sluggish in the spot market. DDR2 512Mb 667MHz slipped to US $4.52. DDR2 512Mb eTT declined to US $3.11, down 4.3% in a single week. DDR 512Mb 400MHz dropped to US $3.75, down 4.8%.
After experiencing the steep price declines in January, it is worthy to note that the more recent price drops appear to be growing less severe. Although the spot market demand is currently unclear, the production lines of the module houses are operating at full capacity. Many module houses are increasing their production utilization rates in preparation for the expected demand during the upcoming Chinese New Year holidays. The holidays last for at least a week, and is usually celebrated in the Greater China area. However, excluding production lines that require temporary suspension for routine maintenance, most of the other fabs of the upstream DRAM makers will continue to roll out products during the Chinese New Year. This may further exacerbate the oversupply problem.
The DRAM spot price has declined substantially during January. For example, the price drop for the DDR2 eTT has already reached 40%. For DDR2 512Mb 667MHz, the price drop has already hit 24%. Moreover, during Micron's recent investor conference, the DRAM maker stated that the DRAM price for Q406 saw a QoQ 15% drop.
In contrast to the weak DRAM seasonality, the capital market appears to be more positive towards the DRAM industry. ProMOS has successfully completed its issuance of a 350 million ECB, where the conversion price and conversion premium respectively reached 14.7 NT dollars and 19%. Under the current downbeat outlook, the successful issuance demonstrates that investors are still willing to perform long-term investments in the DRAM industry.
Despite the ongoing price declines, demand remains sluggish in the spot market. DDR2 512Mb 667MHz slipped to US $4.52. DDR2 512Mb eTT declined to US $3.11, down 4.3% in a single week. DDR 512Mb 400MHz dropped to US $3.75, down 4.8%.
After experiencing the steep price declines in January, it is worthy to note that the more recent price drops appear to be growing less severe. Although the spot market demand is currently unclear, the production lines of the module houses are operating at full capacity. Many module houses are increasing their production utilization rates in preparation for the expected demand during the upcoming Chinese New Year holidays. The holidays last for at least a week, and is usually celebrated in the Greater China area. However, excluding production lines that require temporary suspension for routine maintenance, most of the other fabs of the upstream DRAM makers will continue to roll out products during the Chinese New Year. This may further exacerbate the oversupply problem.
The DRAM spot price has declined substantially during January. For example, the price drop for the DDR2 eTT has already reached 40%. For DDR2 512Mb 667MHz, the price drop has already hit 24%. Moreover, during Micron's recent investor conference, the DRAM maker stated that the DRAM price for Q406 saw a QoQ 15% drop.
In contrast to the weak DRAM seasonality, the capital market appears to be more positive towards the DRAM industry. ProMOS has successfully completed its issuance of a 350 million ECB, where the conversion price and conversion premium respectively reached 14.7 NT dollars and 19%. Under the current downbeat outlook, the successful issuance demonstrates that investors are still willing to perform long-term investments in the DRAM industry.
